SOI is the abbreviation for Silicon-on-insulator, a structure where a thin silicon layer lies atop an insulator, such as silicon dioxide, that may be a silicon or other substrate. This allows for isolation of the active silicon layer containing circuit structures from the bulk substrate (or handle wafer), permitting improved device performance for CMOS devices and more flexible integration schemes for electronic, MEMS and MOEMS devices.
It adopts SIMOX, Bonding and Simbond methods to provide various kinds of SOI products.
Simbond
Derived from conventional wafer bonding and ion-implantation technologies comes another method called Simbond that Simgui originates in preparation of SOI materials.
The ion-implantation provides a well distributed ion-implanted layer. This layer serves as a chemical etch stop layer, which allows for an excellent uniformity control on the thickness of the device layer before a final polish process. The innovated process can produce high quality SOI wafer with superior SOI uniformity and thick BOX layer.