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Al2O3 and Ga2O3 doped ZnO (AZO and GZO) semiconductors are promising as alternatives to ITO for thin-film transparent electrode applications. In particular, AZO thin films, with a low resistivity and
azo igzo al2o3 zno , izo ga2o3 sc v yb y , latio3 target zrb2 y ,
Purity: 98%, 99%, 99.5%, 99.9%, Purity: 98%, 99%, 99.5%, 99.9%, 99.95%, 99.99%, 99.999% 1.) Oxide sputtering target: CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb4O7, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3,
zns wti nicr tial , znsmn azo izo gzo , cd-sn target cds ,
Purity: 98%, 99%, 99.5%, 99.9%, Purity: 98%, 99%, 99.5%, 99.9%, 99.95%, 99.99%, 99.999% 1.) Oxide sputtering target: CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb4O7, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3,
yttrium yb ho sc sm , gadolinium scandium , ndag erbium gd tb ,
